Impact of Displacement Defect Owing to Cosmic Rays on Three-Nanometer-Node Nanosheet FET 6T Static Random Access Memory
نویسندگان
چکیده
In this work, the effect of displacement defect (DD) owing to cosmic rays on six-transistor (6T) static random access memory (SRAM) with a 3 nm node nanosheet field-effect transistor (NSFET) is investigated using technology computer-aided design (TCAD) simulation. order comprehensively study uncertainty radiation NSFET 6T SRAM, shape DD cluster cross-section and damaged by in SRAM are considered. Read noise margin (RSNM) degradation (19 %) highest when rectangular (rectangular-DD cluster) located pull-down1 (PD1) transistor. To mitigate rectangular-DD damage, we studied variation influence sheet source/drain (S/D) overlap length fluctuation. The resulted 2.3 % lower RSNM NS compared nanowire (NW). Under worst conditions (PD1 cluster, NW structure), S/D underlap structure showed 3.7 than structure.
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ژورنال
عنوان ژورنال: IEEE Access
سال: 2023
ISSN: ['2169-3536']
DOI: https://doi.org/10.1109/access.2023.3312016